Equipment Introduction
• It adopts a 3-axis 4-station structure design, and the 3 grinding wheel axes are divided into rough grinding, fine grinding and polishing
• It is suitable for large-scale thinning of single crystal silicon, silicon carbide, etc. in the packaging and testing stage
Main parameters
|
Specifications |
Unit |
Technical indicators |
|
Workpiece diameter |
mm |
Ø300 |
|
Grinding method |
|
Workpiece rotation axial feed grinding |
|
Diamond grinding wheel (compatible with DISCO grinding wheel) |
mm |
Ø300 |
|
Quantity of grinding wheel spindles |
|
3 |
|
Grinding spindle power |
kW |
7.5 |
|
Grinding wheel shaft speed |
r/min |
1000~4000 |
|
Z-axis travel |
mm |
120 |
|
Z-axis grinding feed speed |
mm/s |
0.0001~0.08 |
|
Z-axis minimum feed |
µm |
0.1 |
|
Silicon wafer thickness measurement range |
µm |
0~1800 |
|
Thickness measurement resolution |
µm |
0.1 |
|
Clamping method |
|
Porous vacuum suction cup |
|
Exclusive Edition |
|
4 |
|
Entertainment Dictionary |
r/min |
10~300 |
|
State TTV |
µm |
1.5 |
|
Appearances are available in the field |
µm |
±3 |
|
Appendix schematics |
Ra |
10nm |
|
International(W × D × H) |
mm |
1690x3400x1900 |
|
New York City |
kg |
7000 |
